rev.1.00, jan.14.20 05, page 1 of 4 rjk2006dpj, RJK2006DPE, rjk2006dpf silicon n channel mos fet high speed power switching rej03g0512-0100 rev.1.00 jan.14.2005 features ? low on-resistance ? low leakage current ? high speed switching outline ldpak d g s 1. gate 2. drain 3. source 4. drain 1 2 3 4 1 2 3 4 rjk2006dpj RJK2006DPE 1 2 3 4 rjk2006dpf absolute maximum ratings (ta = 25c) item symbol ratings unit drain to source voltage v dss 200 v gate to source voltage v gss 30 v drain current i d 40 a drain peak current i d (pulse) note1 100 a body-drain diode reverse drain current i dr 40 a body-drain diode reverse drain peak current i dr (pulse) note1 100 a avalanche current i ap note3 27 a avalanche energy e ar note3 48.6 mj channel dissipation pch note2 100 w channel to case thermal impedance ch-c 1.25 c/w channel temperature tch 150 c storage temperature tstg ?55 to +150 c notes: 1. pw 10 s, duty cycle 1% 2. value at tc = 25 c 3. stch = 25 c, tch 150 c
rjk2006dpj, RJK2006DPE, rjk2006dpf rev.1.00, jan.14.20 05, page 2 of 4 electrical characteristics (ta = 25c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 200 ? ? v i d = 10 ma, v gs = 0 zero gate voltage drain current i dss ? ? 1 a v ds = 200 v, v gs = 0 gate to source leak current i gss ? ? 0.1 a v gs = 30 v, v ds = 0 gate to source cutoff voltage v gs(off) 3.0 ? 4.5 v v ds = 10 v, i d = 1 ma forward transfer admittance |yfs| 15 26 ? s i d = 20 a, v ds = 10 v note4 static drain to source on state resistance r ds(on) ? 0.052 0.059 ? i d = 20 a, v gs = 10 v note4 input capacitance ciss ? 1800 ? pf output capacitance coss ? 330 ? pf reverse transfer capacitance crss ? 43 ? pf v ds = 25 v v gs = 0 f = 1 mhz turn-on delay time td(on) ? 30 ? ns rise time tr ? 180 ? ns turn-off delay time td(off) ? 85 ? ns fall time tf ? 100 ? ns i d = 20 a v gs = 10 v r l = 5 ? rg = 10 ? total gate charge qg ? 43 ? nc gate to source charge qgs ? 11 ? nc gate to drain charge qgd ? 20 ? nc v dd = 160 v v gs = 10 v i d = 40 a body-drain diode forward voltage v df ? 1.0 1.5 v i f = 40 a, v gs = 0 note4 body-drain diode reverse recovery time trr ? 150 ? ns body-drain diode reverse recovery charge qrr ? 0.8 ? c i f = 40 a, v gs = 0 dif/dt = 100 a/ s notes: 4. pulse test
rjk2006dpj, RJK2006DPE, rjk2006dpf rev.1.00, jan.14.20 05, page 3 of 4 package dimensions ? rjk2006dpj package code jedec jeita mass (reference value) ldpak (l) ? ? 1.40 g 10.2 0.3 0.86 0.76 0.1 2.54 0.5 2.54 0.5 + 0.2 ? 0.1 1.3 0.2 4.44 0.2 1.3 0.15 2.49 0.2 0.4 0.1 11.0 0.5 8.6 0.3 10.0 11.3 0.5 + 0.3 ? 0.5 (1.4) 1.37 0.2 as of january, 2003 unit: mm ? RJK2006DPE package code jedec jeita mass (reference value) ldpak (s)-(1) ? ? 1.30 g 10.2 0.3 1.37 0.2 (1.5) (1.4) 8.6 0.3 10.0 + 0.3 ? 0.5 4.44 0.2 1.3 0.15 0.1 + 0.2 ? 0.1 0.4 0.1 2.49 0.2 0.86 + 0.2 ? 0.1 2.54 0.5 2.54 0.5 1.3 0.2 3.0 + 0.3 ? 0.5 (1.5) 7.8 6.6 2.2 1.7 7.8 7.0 as of january, 2003 unit: mm
rjk2006dpj, RJK2006DPE, rjk2006dpf rev.1.00, jan.14.20 05, page 4 of 4 ? rjk2006dpf package code jedec jeita mass (reference value) ldpak (s)-(2) ? ? 1.35 g 10.2 0.3 1.37 0.2 (2.3) (1.4) 8.6 0.3 10.0 + 0.3 ? 0.5 4.44 0.2 1.3 0.15 0.1 + 0.2 ? 0.1 0.4 0.1 2.49 0.2 0.86 + 0.2 ? 0.1 2.54 0.5 2.54 0.5 1.3 0.2 5.0 + 0.3 ? 0.5 (1.5) 7.8 6.6 2.2 1.7 7.8 7.0 as of january, 2003 unit: mm ordering information part name quantity shipping container RJK2006DPE-tl-e 1000 pcs taping note: for some grades, production may be terminated. please contact the renesas sales office to check the state of production before ordering the product.
keep safety first in your circuit designs! 1. renesas technology corp. puts the maximum effort into making semiconductor products better and more reliable, but there is al ways the possibility that trouble may occur with them. trouble with semiconductors may lead to personal injury, fire or property damage. remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. notes regarding these materials 1. these materials are intended as a reference to assist our customers in the selection of the renesas technology corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to renesas t echnology corp. or a third party. 2. renesas technology corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating i n the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. all information contained in these materials, including product data, diagrams, charts, programs and algorithms represents in formation on products at the time of publication of these materials, and are subject to change by renesas technology corp. without notice due to product improvement s or other reasons. it is therefore recommended that customers contact renesas technology corp. or an authorized renesas technology corp. product distrib utor for the latest product information before purchasing a product listed herein. the information described here may contain technical inaccuracies or typographical errors. renesas technology corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or e rrors. please also pay attention to information published by renesas technology corp. by various means, including the renesas technolo gy corp. semiconductor home page (http://www.renesas.com). 4. when using any or all of the information contained in these materials, including product data, diagrams, charts, programs, an d algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. renesas technology corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. renesas technology corp. semiconductors are not designed or manufactured for use in a device or system that is used under cir cumstances in which human life is potentially at stake. please contact renesas technology corp. or an authorized renesas technology corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerosp ace, nuclear, or undersea repeater use. 6. the prior written approval of renesas technology corp. is necessary to reprint or reproduce in whole or in part these materia ls. 7. if these products or technologies are subject to the japanese export control restrictions, they must be exported under a lice nse from the japanese government and cannot be imported into a country other than the approved destination. any diversion or reexport contrary to the export control laws and regulations of japan and/or the country of destination is pro hibited. 8. please contact renesas technology corp. for further details on these materials or the products contained therein. sales strategic planning div. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan http://www.renesas.com refer to " http://www.renesas.com/en/network " for the latest and detailed information. renesas technology america, inc. 450 holger way, san jose, ca 95134-1368, u.s.a tel: <1> (408) 382-7500, fax: <1> (408) 382-7501 renesas technology europe limited dukes meadow, millboard road, bourne end, buckinghamshire, sl8 5fh, u.k. tel: <44> (1628) 585-100, fax: <44> (1628) 585-900 renesas technology hong kong ltd. 7th floor, north tower, world finance centre, harbour city, 1 canton road, tsimshatsui, kowloon, hong kong tel: <852> 2265-6688, fax: <852> 2730-6071 renesas technology taiwan co., ltd. 10th floor, no.99, fushing north road, taipei, taiwan tel: <886> (2) 2715-2888, fax: <886> (2) 2713-2999 renesas technology (shanghai) co., ltd. unit2607 ruijing building, no.205 maoming road (s), shanghai 200020, china tel: <86> (21) 6472-1001, fax: <86> (21) 6415-2952 renesas technology singapore pte. ltd. 1 harbour front avenue, #06-10, keppel bay tower, singapore 098632 tel: <65> 6213-0200, fax: <65> 6278-8001 renesas sales offices ? 2005. renesas technology corp., all rights reserved. printed in japan. colophon .2.0
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